MOSFET N-CH 60V 3.5A 6CPH
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 117mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.8 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 310 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-CPH |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPW60R040C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 50A TO247-3 |
|
IRFI820GPBFVishay / Siliconix |
MOSFET N-CH 500V 2.1A TO220-3 |
|
TK7P50D(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 7A DPAK |
|
IRF9335PBFRochester Electronics |
AUTOMOTIVE HEXFET P-CHANNEL POWE |
|
IRF7241PBFRochester Electronics |
HEXFET POWER MOSFET |
|
ISP25DP06LMXTSA1Rochester Electronics |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
HUF75343S3Rochester Electronics |
75 A, 55 V, 0.009 OHM, N-CHANNEL |
|
SIR403EDP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 40A PPAK SO-8 |
|
IXTT52N30PWickmann / Littelfuse |
MOSFET N-CH 300V 52A TO268 |
|
IPI80N06S407AKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTH160N15TWickmann / Littelfuse |
MOSFET N-CH 150V 160A TO247 |
|
CPH6350-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 6A 6CPH |
|
SCH1435-TL-WRochester Electronics |
MOSFET N-CH 30V 3A 6SCH |