N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI2307BDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 2.5A SOT23-3 |
|
IPP028N08N3GHKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2463T100ROHM Semiconductor |
MOSFET N-CH 60V 2A MPT3 |
|
ZXMP4A16GQTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V SOT223 |
|
C3M0160120DWolfspeed - a Cree company |
SICFET N-CH 1200V 17A TO247-3 |
|
IPD25N06S240ATMA2Rochester Electronics |
MOSFET N-CH 55V 29A TO252-3-11 |
|
FQPF12N60TRochester Electronics |
MOSFET N-CH 600V 5.8A TO220F |
|
SIS447DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 18A PPAK1212-8 |
|
PMN20ENAXNexperia |
MOSFET N-CH 40V 6.2A 6TSOP |
|
IRF40DM229Rochester Electronics |
MOSFET N-CH 40V 159A DIRECTFET |
|
RJK03M8DNS-WS#J5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STP210N75F6STMicroelectronics |
MOSFET N-CH 75V 120A TO220 |
|
SI8851EDB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V PWR MICRO FOOT |