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FQPF12N60T

FQPF12N60T

MOSFET N-CH 600V 5.8A TO220F

FQPF12N60T

FQPF12N60T

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Part No :

FQPF12N60T

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 5.8A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11336 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 23 - Dec 27 2024
PDF
FQPF12N60T PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:700mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF12N60T is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF12N60T price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF12N60T to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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