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MOSFET N-CH 40V 159A DIRECTFET

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IRF40DM229

IRF40DM229

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Part No :

IRF40DM229

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 159A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19196 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IRF40DM229 PDF
Type Description
Series:StrongIRFET™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:159A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.85mOhm @ 97A, 10V
Vgs(th) (Max) @ Id:3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:161 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5.317 pF @ 25 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DirectFET™ Isometric MF
Package / Case:DirectFET™ Isometric MF
IRF40DM229 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF40DM229 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF40DM229 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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