RES 2.8K OHM 1/8W 1% AXIAL
MOSFET N-CH 80V 10.7A/22A 8MLP
HAZARDOUS AREA BX -2
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 10.7A (Ta), 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Rds On (Max) @ Id, Vgs: | 11.7mOhm @ 10.7A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 41 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2640 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 2.3W (Ta), 40W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-MLP (3.3x3.3) |
Package / Case: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDMS7670ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22A/42A 8PQFN |
|
IXFA8N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 8A TO263 |
|
BSC084P03NS3EGATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 14.9A 8TDSON |
|
NVMFS5C612NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 5DFN |
|
NTMFS5C423NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
HUF75321D3SRochester Electronics |
MOSFET N-CH 55V 20A TO252AA |
|
IXTH130N15X4Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO247 |
|
FQAF16N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11.3A TO3PF |
|
DMP3018SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.5/25A 8SO T&R |
|
SI8812DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 4MICROFOOT |
|
TSM230N06PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 44A 8PDFN |
|
PMZB320UPE,315Rochester Electronics |
NOW NEXPERIA PMZB320UPE - SMALL |
|
SFP9610Rochester Electronics |
P-CHANNEL POWER MOSFET |