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BSC084P03NS3EGATMA1

BSC084P03NS3EGATMA1

MOSFET P-CH 30V 14.9A 8TDSON

BSC084P03NS3EGATMA1

BSC084P03NS3EGATMA1

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Part No :

BSC084P03NS3EGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 30V 14.9A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
852485 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
PDF
BSC084P03NS3EGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14.9A (Ta), 78.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:57.7 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4240 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN
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