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SI8812DB-T2-E1

SI8812DB-T2-E1

Image is for reference, please contact us to get the real picture

Part No :

SI8812DB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 4MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
922492 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SI8812DB-T2-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 8 V
Vgs (Max):±5V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-UFBGA
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