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FQT4N20TF

FQT4N20TF

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Part No :

FQT4N20TF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 850MA SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12363 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
FQT4N20TF PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:220 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
FQT4N20TF is available at GangBo-ic.com, Please review product page below for detailed information, including FQT4N20TF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQT4N20TF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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