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104PSB152K2H

104PSB152K2H

CAP FILM 0.1UF 10% 1.5KVDC RAD

TPH3208LDG

TPH3208LDG

GANFET N-CH 650V 20A 3PQFN

TPH3208LDG

TPH3208LDG

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Part No :

TPH3208LDG

Manufacturer
Transphorm
Description
GANFET N-CH 650V 20A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10285 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
PDF
TPH3208LDG PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id:2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 8 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
TPH3208LDG is available at GangBo-ic.com, Please review product page below for detailed information, including TPH3208LDG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TPH3208LDG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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