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FDP2D3N10C

FDP2D3N10C

MOSFET N-CH 100V 222A TO220-3

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FDP2D3N10C

FDP2D3N10C

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Part No :

FDP2D3N10C

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 222A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14676 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FDP2D3N10C PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:222A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:152 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11.18 pF @ 50 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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