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BFC233862154

BFC233862154

CAP FILM 0.15UF 20% 1KVDC RADIAL

SIR626ADP-T1-RE3

SIR626ADP-T1-RE3

MOSFET N-CH 60V 40.4A/165A PPAK

SIR626ADP-T1-RE3

SIR626ADP-T1-RE3

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Part No :

SIR626ADP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 40.4A/165A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15934 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:40.4A (Ta), 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.75mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:83 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3770 pF @ 30 V
FET Feature:-
Power Dissipation (Max):6.25W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
SIR626ADP-T1-RE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIR626ADP-T1-RE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIR626ADP-T1-RE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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