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FDP16AN08A0

FDP16AN08A0

POWER FIELD-EFFECT TRANSISTOR, 9

FDP16AN08A0

FDP16AN08A0

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Part No :

FDP16AN08A0

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 9
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15890 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FDP16AN08A0 PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.857 pF @ 25 V
FET Feature:-
Power Dissipation (Max):135W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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