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IRL2910SPBF

IRL2910SPBF

Image is for reference, please contact us to get the real picture

Part No :

IRL2910SPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 55A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
411641 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
PDF
IRL2910SPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:26mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3.7 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL2910SPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRL2910SPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRL2910SPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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