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FDB8860

FDB8860

MOSFET N-CH 30V 80A TO263AB

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VTDCFAPI001G-1C1

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FDB8860

FDB8860

Image is for reference, please contact us to get the real picture

Part No :

FDB8860

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 30V 80A TO263AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
4751600 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 16 - Jun 20 2024
PDF
FDB8860 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:214 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12585 pF @ 15 V
FET Feature:-
Power Dissipation (Max):254W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AB
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB8860 is available at GangBo-ic.com, Please review product page below for detailed information, including FDB8860 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDB8860 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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