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STP11N65M2

STP11N65M2

MOSFET N-CH 650V 7A TO220

AR023ZMCSC00SUEA0-DPBR

AR023ZMCSC00SUEA0-DPBR

IMAGE SENSOR 2 MP 1/3 CIS

STP11N65M2

STP11N65M2

Image is for reference, please contact us to get the real picture

Part No :

STP11N65M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 7A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
181618 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
PDF
STP11N65M2 PDF
Type Description
Series:MDmesh™ II Plus
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 100 V
FET Feature:-
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
STP11N65M2 is available at GangBo-ic.com, Please review product page below for detailed information, including STP11N65M2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STP11N65M2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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