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STP11N65M2

STP11N65M2

MOSFET N-CH 650V 7A TO220

STP11N65M2

STP11N65M2

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Part No :

STP11N65M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 7A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
181618 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
STP11N65M2 PDF
Type Description
Series:MDmesh™ II Plus
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 100 V
FET Feature:-
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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