MOSFET N-CH 200V 100A T-MAX
Type | Description |
---|---|
Series: | * |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 18mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 330 nC @ 10 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 9880 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Through Hole |
Supplier Device Package: | T-MAX™ [B2] |
Package / Case: | TO-247-3 Variant |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFR1010ZPBFRochester Electronics |
IRFR1010 - 12V-300V N-CHANNEL PO |
|
BSC025N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 25A/100A TDSON |
|
IRL8113PBFRochester Electronics |
HEXFET POWER MOSFET |
|
STDV3055L104T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A DPAK |
|
SI3473CDV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 8A 6TSOP |
|
DMN3200U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2.2A SOT23-3 |
|
IPD60R280P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 12A TO252-3 |
|
EPC2203EPC |
GANFET N-CH 80V 1.7A DIE |
|
PMV45EN,215Rochester Electronics |
MOSFET N-CH 30V 5.4A TO236AB |
|
IRFU3707ZPBFRochester Electronics |
IRFU3707 - HEXFET N-CHANNEL |
|
IPB057N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/45A D2PAK |
|
IXFK520N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 520A TO264AA |
|
HUFA75852G3-F085Rochester Electronics |
N-CHANNEL, MOSFET |