MOSFET N-CH 60V 12A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 104mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 5 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 440 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.5W (Ta), 48W (Tj) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI3473CDV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 8A 6TSOP |
|
DMN3200U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2.2A SOT23-3 |
|
IPD60R280P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 12A TO252-3 |
|
EPC2203EPC |
GANFET N-CH 80V 1.7A DIE |
|
PMV45EN,215Rochester Electronics |
MOSFET N-CH 30V 5.4A TO236AB |
|
IRFU3707ZPBFRochester Electronics |
IRFU3707 - HEXFET N-CHANNEL |
|
IPB057N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/45A D2PAK |
|
IXFK520N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 520A TO264AA |
|
HUFA75852G3-F085Rochester Electronics |
N-CHANNEL, MOSFET |
|
SIDR140DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 79A/100A PPAK |
|
FDP16AN08A0Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 9 |
|
NTMFS5H600NLT1GRochester Electronics |
SINGLE N CHANNEL POWER MOSFET 60 |
|
IRFZ44NSTRRPBFRochester Electronics |
HEXFET POWER MOSFET |