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BSC090N03MSGATMA1

BSC090N03MSGATMA1

MOSFET N-CH 30V 12A/48A TDSON

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BSC090N03MSGATMA1

BSC090N03MSGATMA1

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Part No :

BSC090N03MSGATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 12A/48A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
20000 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
PDF
BSC090N03MSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.9 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN
BSC090N03MSGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC090N03MSGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC090N03MSGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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