MOSFET 2N-CH 600V 20A SP1
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 20A |
Rds On (Max) @ Id, Vgs: | 276mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5316pF @ 25V |
Power - Max: | 208W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APTM100DUM90GMicrosemi |
MOSFET 2N-CH 1000V 78A SP6 |
|
IRF6150IR (Infineon Technologies) |
MOSFET 2P-CH 20V 7.9A FLIP-FET |
|
APTC90H12T1GMicrosemi |
MOSFET 4N-CH 900V 30A SP1 |
|
SQJ500EPSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 40V DPAK |
|
APTC90AM60SCTGMicrosemi |
MOSFET 2N-CH 900V 59A SP4 |
|
UPA1981TE-T1-ARenesas Electronics America |
MOSFET |
|
UPA2385T1P-E1-ARenesas Electronics America |
MOSFET N-CH |
|
APTM50DUM35TGMicrosemi |
MOSFET 2N-CH 500V 99A SP4 |
|
KGF6N05D-400Intersil (Renesas Electronics America) |
IC MOSFET N-CH |
|
GWM220-004P3-SMD SAMWickmann / Littelfuse |
MOSFET 6N-CH 40V 180A ISOPLUS |
|
APTM100VDA35T3GMicrosemi |
MOSFET 2N-CH 1000V 22A SP3 |
|
APTC60AM83BC1GMicrosemi |
MOSFET 3N-CH 600V 36A SP1 |
|
VWM270-0075X2Wickmann / Littelfuse |
MOSFET 6N-CH 75V 270A V2-PAK |