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APTM100VDA35T3G

APTM100VDA35T3G

MOSFET 2N-CH 1000V 22A SP3

APTM100VDA35T3G

APTM100VDA35T3G

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Part No :

APTM100VDA35T3G

Manufacturer
Microsemi
Description
MOSFET 2N-CH 1000V 22A SP3
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
167816 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:POWER MOS 7®
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):1000V (1kV)
Current - Continuous Drain (Id) @ 25°C:22A
Rds On (Max) @ Id, Vgs:420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:5200pF @ 25V
Power - Max:390W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP3
Supplier Device Package:SP3
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