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APTC90H12T1G

APTC90H12T1G

MOSFET 4N-CH 900V 30A SP1

APTC90H12T1G

APTC90H12T1G

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Part No :

APTC90H12T1G

Manufacturer
Microsemi
Description
MOSFET 4N-CH 900V 30A SP1
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
087808 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
APTC90H12T1G PDF
Type Description
Series:CoolMOS™
Package:Tray
Part Status:Obsolete
FET Type:4 N-Channel (H-Bridge)
FET Feature:Super Junction
Drain to Source Voltage (Vdss):900V
Current - Continuous Drain (Id) @ 25°C:30A
Rds On (Max) @ Id, Vgs:120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:6800pF @ 100V
Power - Max:250W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP1
Supplier Device Package:SP1
APTC90H12T1G is available at GangBo-ic.com, Please review product page below for detailed information, including APTC90H12T1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for APTC90H12T1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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