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FDPC1012S

FDPC1012S

POWER FIELD-EFFECT TRANSISTOR

FDPC1012S

FDPC1012S

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Part No :

FDPC1012S

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
18707 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs:7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V
Vgs(th) (Max) @ Id:2.2V @ 250µA, 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:8nC, 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1075pF @ 13V, 3456pF @ 13V
Power - Max:800mW (Ta), 900mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:Powerclip-33
FDPC1012S is available at GangBo-ic.com, Please review product page below for detailed information, including FDPC1012S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDPC1012S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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