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EFC6604R-TR

EFC6604R-TR

POWER FIELD-EFFECT TRANSISTOR, 2

EFC6604R-TR

EFC6604R-TR

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Part No :

EFC6604R-TR

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
1418600 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
EFC6604R-TR PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.6W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-XFBGA
Supplier Device Package:6-EFCP (1.9x1.46)
EFC6604R-TR is available at GangBo-ic.com, Please review product page below for detailed information, including EFC6604R-TR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EFC6604R-TR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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