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BSM180D12P2E002

BSM180D12P2E002

1200V, 204A, HALF BRIDGE, SILICO

BSM180D12P2E002

BSM180D12P2E002

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Part No :

BSM180D12P2E002

Manufacturer
ROHM Semiconductor
Description
1200V, 204A, HALF BRIDGE, SILICO
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
224522 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:204A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:18000pF @ 10V
Power - Max:1360W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
BSM180D12P2E002 is available at GangBo-ic.com, Please review product page below for detailed information, including BSM180D12P2E002 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSM180D12P2E002 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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