MOSFET 2N-CH 1200V 60A SP6
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 60A |
Rds On (Max) @ Id, Vgs: | 175mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 748nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 20600pF @ 25V |
Power - Max: | 1250W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APTM10DHM05GRoving Networks / Microchip Technology |
MOSFET 2N-CH 100V 278A SP6 |
|
MCB40P1200LB-TRRWickmann / Littelfuse |
MCB40P1200LB-TRR |
|
UPA2590T1H-T1-ATRochester Electronics |
POWER, 4.5A, 30V, N-CH MOSFET |
|
SQJB46ELP-T1_GE3Vishay / Siliconix |
AUTOMOTIVE DUAL N-CHANNEL 40 V ( |
|
SIZ980BDT-T1-GE3Vishay / Siliconix |
MOSFET DUAL N-CH 30V PPAIR 6 X 5 |
|
DMNH6021SPDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI506 |
|
DMN3035LWN-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 5.5A VDFN3020-8 |
|
APTC80DDA15T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 800V 28A SP3 |
|
DMC3025LNS-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 31V 40V POWERDI333 |
|
APTC60HM70T3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 39A SP3 |
|
MRF8S21100HSR3,128Rochester Electronics |
RF S BAND, N-CHANNEL, MOSFET |
|
IRFR21496Rochester Electronics |
2.2A 250V 2.000 OHM N-CHANNEL |
|
APTM50DHM38GRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 90A SP6 |