RES 270 OHM 1% 1/4W 0805
SNAP-IN HIGH CV 105C 130UF 350V
IC MCU 32BIT 512KB FLASH 64TQFP
MOSFET BVDSS: 41V-60V POWERDI506
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 8.2A (Ta), 32A(Tc) |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1143pF @ 25V |
Power - Max: | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 (Type R) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN3035LWN-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 5.5A VDFN3020-8 |
|
APTC80DDA15T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 800V 28A SP3 |
|
DMC3025LNS-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 31V 40V POWERDI333 |
|
APTC60HM70T3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 39A SP3 |
|
MRF8S21100HSR3,128Rochester Electronics |
RF S BAND, N-CHANNEL, MOSFET |
|
IRFR21496Rochester Electronics |
2.2A 250V 2.000 OHM N-CHANNEL |
|
APTM50DHM38GRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 90A SP6 |
|
DMPH6050SPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CH 26A POWERDI5060-8 |
|
RF1S50N06SM9AS2551Rochester Electronics |
50A, 60V, 0.022 OHM, ESD RATED, |
|
DMN16M9UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL X3-DSN2718-6 |
|
STL64DN4F7AGSTMicroelectronics |
MOSFET N-CH 40V 40A POWERFLAT |
|
APTM50HM75FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 500V 46A SP3 |
|
FSS248-TL-ERochester Electronics |
N-CHANNEL MOSFET |