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SIZ980BDT-T1-GE3

SIZ980BDT-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIZ980BDT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET DUAL N-CH 30V PPAIR 6 X 5
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
15420 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual), Schottky
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs:4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18nC, 79nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:790pF, 3655pF @ 15V
Power - Max:3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerPair™
Supplier Device Package:8-PowerPair™
SIZ980BDT-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIZ980BDT-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIZ980BDT-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

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