PM-MOSFET-SIC-SBD~-SP6C
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N Channel (Phase Leg) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 495A (Tc) |
Rds On (Max) @ Id, Vgs: | 5.2mOhm @ 240A, 20V |
Vgs(th) (Max) @ Id: | 2.8V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs: | 1392nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 18.1pF @ 1000V |
Power - Max: | 2.031kW (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | SP6C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN13M9UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL X3-DSN3518-6 |
|
ISL6605CR-TR5151Rochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
FW217-NMM-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
ECH8604-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
APTM60H23FT1GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 20A SP1 |
|
2N7002KDW-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-363 |
|
RFG45N06LERochester Electronics |
45A, 60V, 0.028OHM, N-CHANNEL, |
|
NVMFD020N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8DFN 5X6 |
|
FW256-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
APTC80H29SCTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 800V 15A SP4 |
|
FDB3652SB82059Rochester Electronics |
1-ELEMENT, N-CHANNEL |
|
APTM100A23STGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1000V 36A SP4 |
|
2SJ662-DL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |