CAP ALUM POLY 470UF 20% 16V T/H
DC DC CONVERTER 5.2V 50W
HALF BRIDGE BASED MOSFET DRIVER,
CAB153N PVC 4X18AWG 10M
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
FET Feature: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | - |
Operating Temperature: | - |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FW217-NMM-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
ECH8604-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
APTM60H23FT1GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 20A SP1 |
|
2N7002KDW-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-363 |
|
RFG45N06LERochester Electronics |
45A, 60V, 0.028OHM, N-CHANNEL, |
|
NVMFD020N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8DFN 5X6 |
|
FW256-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
APTC80H29SCTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 800V 15A SP4 |
|
FDB3652SB82059Rochester Electronics |
1-ELEMENT, N-CHANNEL |
|
APTM100A23STGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1000V 36A SP4 |
|
2SJ662-DL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
FDSS2407S_B82086Rochester Electronics |
3.3A, 62V, 0.11OHM, 2-ELEMENT, |
|
APTM50H15FT1GRoving Networks / Microchip Technology |
MOSFET 4N-CH 500V 25A SP1 |