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2SJ662-DL-E

2SJ662-DL-E

P-CHANNEL SILICON MOSFET

2SJ662-DL-E

2SJ662-DL-E

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Part No :

2SJ662-DL-E

Manufacturer
Rochester Electronics
Description
P-CHANNEL SILICON MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10792 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
FET Feature:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:-
Operating Temperature:-
Mounting Type:-
Package / Case:-
Supplier Device Package:-
2SJ662-DL-E is available at GangBo-ic.com, Please review product page below for detailed information, including 2SJ662-DL-E price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2SJ662-DL-E to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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  • 2SJ662-DL-E Price
  • 2SJ662-DL-E Series
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