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BSO211PNTMA1

BSO211PNTMA1

POWER FIELD-EFFECT TRANSISTOR, 4

BSO211PNTMA1

BSO211PNTMA1

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Part No :

BSO211PNTMA1

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 4
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
634263 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
BSO211PNTMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4.7A
Rds On (Max) @ Id, Vgs:67mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:23.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:920pF @ 15V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:P-DSO-8
BSO211PNTMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSO211PNTMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSO211PNTMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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