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SIZF918DT-T1-GE3

SIZF918DT-T1-GE3

MOSFET DUAL N-CH 30V POWERPAIR 6

SIZF918DT-T1-GE3

SIZF918DT-T1-GE3

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Part No :

SIZF918DT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET DUAL N-CH 30V POWERPAIR 6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
674267 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual), Schottky
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs:4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA, 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22nC, 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1060pF, 2650pF @ 15V
Power - Max:3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-PowerPair® (6x5)
SIZF918DT-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIZF918DT-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIZF918DT-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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