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FDMS1D2N03DSD

FDMS1D2N03DSD

PT11N 30/12 & PT11N 30/12

FDMS1D2N03DSD

FDMS1D2N03DSD

Image is for reference, please contact us to get the real picture

Part No :

FDMS1D2N03DSD

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
PT11N 30/12 & PT11N 30/12
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
664266 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs:3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
Vgs(th) (Max) @ Id:2.5V @ 320µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V, 117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1410pF @ 15V, 4860pF @ 15V
Power - Max:2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-PQFN (5x6)
FDMS1D2N03DSD is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS1D2N03DSD price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS1D2N03DSD to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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