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IPG16N10S4L61AATMA1

IPG16N10S4L61AATMA1

MOSFET 2N-CH 100V 16A 8TDSON

IPG16N10S4L61AATMA1

IPG16N10S4L61AATMA1

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Part No :

IPG16N10S4L61AATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 100V 16A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
261226 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPG16N10S4L61AATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:16A
Rds On (Max) @ Id, Vgs:61mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:845pF @ 25V
Power - Max:29W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
IPG16N10S4L61AATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPG16N10S4L61AATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPG16N10S4L61AATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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