HEATSINK 50X50X12.7MM XCUT T412
HEATSINK 45X45X10MM XCUT T412
MOSFET 8V~24V U-WLB1510-6
IDC CABLE - MKC10K/MC10M/MPK10K
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.25A |
Rds On (Max) @ Id, Vgs: | 55mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 269pF @ 10V |
Power - Max: | 840mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UFBGA, WLBGA |
Supplier Device Package: | U-WLB1510-6 (Type B) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDMS7602SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/17A POWER56 |
|
NDS8947Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
QH8K22TCRROHM Semiconductor |
QH8K22 IS LOW ON - RESISTANCE MO |
|
FDMA6023PZTSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 3.6A 6MICROFET |
|
PMV280ENEA,215Rochester Electronics |
1.1A, 100V, N CHANNEL, SILICON, |
|
APTM50AM38STGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 90A SP4 |
|
SH8K52GZETBROHM Semiconductor |
100V NCH+NCH POWER MOSFET. SH8K5 |
|
IPG20N04S412AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 40V 20A 8TDSON |
|
SIR770DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A PPAK SO-8 |
|
ZXMP3A17DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 30V 3.4A 8-SOIC |
|
NDC7002NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 50V 0.51A SSOT6 |
|
AON2802Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 2A 6DFN |
|
UPA672T-T1-ARochester Electronics |
POWER, N-CHANNEL MOSFET |