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SI4963BDY-T1-GE3

SI4963BDY-T1-GE3

MOSFET 2P-CH 20V 4.9A 8SOIC

SI4963BDY-T1-GE3

SI4963BDY-T1-GE3

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Part No :

SI4963BDY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2P-CH 20V 4.9A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
271227 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SI4963BDY-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4.9A
Rds On (Max) @ Id, Vgs:32mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
SI4963BDY-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI4963BDY-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI4963BDY-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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