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MMDF3N03HDR2

MMDF3N03HDR2

N-CHANNEL POWER MOSFET

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MMDF3N03HDR2

MMDF3N03HDR2

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Part No :

MMDF3N03HDR2

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
911091 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:4.1A
Rds On (Max) @ Id, Vgs:70mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:630pF @ 24V
Power - Max:2W
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
MMDF3N03HDR2 is available at GangBo-ic.com, Please review product page below for detailed information, including MMDF3N03HDR2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MMDF3N03HDR2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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