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US6M1TR

US6M1TR

Image is for reference, please contact us to get the real picture

Part No :

US6M1TR

Manufacturer
ROHM Semiconductor
Description
MOSFET N/P-CH 30V/20V TUMT6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
041104 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
US6M1TR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V, 20V
Current - Continuous Drain (Id) @ 25°C:1.4A, 1A
Rds On (Max) @ Id, Vgs:240mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:70pF @ 10V
Power - Max:1W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-SMD, Flat Leads
Supplier Device Package:TUMT6
US6M1TR is available at GangBo-ic.com, Please review product page below for detailed information, including US6M1TR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for US6M1TR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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