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IRF9910PBF

IRF9910PBF

N-CHANNEL POWER MOSFET

IRF9910PBF

IRF9910PBF

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Part No :

IRF9910PBF

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
991099 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRF9910PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:10A, 12A
Rds On (Max) @ Id, Vgs:13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
IRF9910PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF9910PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF9910PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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