N-CHANNEL POWER MOSFET
RED 640NM/YELLOW 572NM
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 10A, 12A |
Rds On (Max) @ Id, Vgs: | 13.4mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 10V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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