MOSFET 4N-CH 10.6V 16DIP
Type | Description |
---|---|
Series: | EPAD® |
Package: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | - |
Rds On (Max) @ Id, Vgs: | 500Ohm @ 4.2V |
Vgs(th) (Max) @ Id: | 220mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 16-DIP (0.300", 7.62mm) |
Supplier Device Package: | 16-PDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PSMN5R0-100ES127Rochester Electronics |
120A, 100V, 0.005OHM, N CHANNE |
|
NTLJD3115PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 2.3A 6-WDFN |
|
NTHD4401PT3GRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
SMA5125Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 60V 10A 12-SIP |
|
MSCC60AM23C4AGRoving Networks / Microchip Technology |
PM-MOSFET-COOLMOS-SBD-SP4 |
|
NTLUD3191PZTBGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
ECH8672-TL-HRochester Electronics |
POWER, P-CHANNEL, MOSFET |
|
DMP3164LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 |
|
FDS89161LZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 2.7A 8SOIC |
|
EMH2418R-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 24V 9A EMH8 |
|
US6J11TRROHM Semiconductor |
MOSFET 2P-CH 12V 1.3A TUMT6 |
|
RFIS40N10LERochester Electronics |
40A, 100V, 0.040OHM, N-CHANNEL, |
|
ALD114835SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |