CAP CER 1210 220PF 25V ULTRA STA
MOSFET 2P-CH 12V 1.3A TUMT6
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 1.3A |
Rds On (Max) @ Id, Vgs: | 260mOhm @ 1.3A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 6V |
Power - Max: | 320mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | TUMT6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RFIS40N10LERochester Electronics |
40A, 100V, 0.040OHM, N-CHANNEL, |
|
ALD114835SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
FDPC8016SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 8PWRCLIP |
|
FF08MR12W1MA1B11ABPSA1IR (Infineon Technologies) |
EASY PACK |
|
ALD310708SCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16SOIC |
|
SQJB80EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 80V POWERPAK SO8 |
|
FDMD8260LET60Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 15A 12POWER |
|
PMDPB70EN,115Rochester Electronics |
PMDPB70EN - SMALL SIGNAL, HUSON6 |
|
DMN2400UV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 1.33A SOT563 |
|
MCH6631-TL-E-SYRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
IPU80R750P7AKMA1-NDRochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
ADP3110KRZ-RL-ADRochester Electronics |
DUAL BOOTSTRAPPED 12 VOLT MOSFET |
|
CA5130AM96Rochester Electronics |
OPERATIONAL AMPLIFIER W/MOSFET I |