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US6J11TR

US6J11TR

MOSFET 2P-CH 12V 1.3A TUMT6

US6J11TR

US6J11TR

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Part No :

US6J11TR

Manufacturer
ROHM Semiconductor
Description
MOSFET 2P-CH 12V 1.3A TUMT6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10661 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
US6J11TR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:1.3A
Rds On (Max) @ Id, Vgs:260mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:290pF @ 6V
Power - Max:320mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-SMD, Flat Leads
Supplier Device Package:TUMT6
US6J11TR is available at GangBo-ic.com, Please review product page below for detailed information, including US6J11TR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for US6J11TR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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