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NTLJD3115PT1G

NTLJD3115PT1G

MOSFET 2P-CH 20V 2.3A 6-WDFN

NTLJD3115PT1G

NTLJD3115PT1G

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Part No :

NTLJD3115PT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET 2P-CH 20V 2.3A 6-WDFN
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
89903000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
NTLJD3115PT1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.3A
Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:531pF @ 10V
Power - Max:710mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-WDFN Exposed Pad
Supplier Device Package:6-WDFN (2x2)
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