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PMDPB30XN,115

PMDPB30XN,115

NOW NEXPERIA PMDPB30XN - SMALL S

PMDPB30XN,115

PMDPB30XN,115

Image is for reference, please contact us to get the real picture

Part No :

PMDPB30XN,115

Manufacturer
Rochester Electronics
Description
NOW NEXPERIA PMDPB30XN - SMALL S
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
11000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
PMDPB30XN,115 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4A
Rds On (Max) @ Id, Vgs:40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:660pF @ 10V
Power - Max:490mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UDFN Exposed Pad
Supplier Device Package:6-HUSON-EP (2x2)
PMDPB30XN,115 is available at GangBo-ic.com, Please review product page below for detailed information, including PMDPB30XN,115 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for PMDPB30XN,115 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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