MOSFET 2N-CH 30V 3A 8SOIC
Type | Description |
---|---|
Series: | STripFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Not For New Designs |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Rds On (Max) @ Id, Vgs: | 110mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 121pF @ 25V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SMA5117Sanken Electric Co., Ltd. |
MOSFET 6N-CH 250V 7A 12-SIP |
|
UPA2754GR-E2-ARochester Electronics |
POWER, 11A, 30V, N-CH MOSFET |
|
MSCSM120AM027CT6AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C |
|
DMTH4007SPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 40V POWERDI506 |
|
FDMD82100Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SI8900EDB-T2-E1Vishay / Siliconix |
MOSFET 2N-CH 20V 5.4A 10-MFP |
|
FDMC8032LSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 7A 8-MLP |
|
AOTE21115CAlpha and Omega Semiconductor, Inc. |
MOSFET 2P-CH 8TSSOP |
|
FDMC8097ACSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 150V |
|
BSS84AKV,115Nexperia |
MOSFET 2P-CH 50V 170MA SOT666 |
|
QS8M12TCRROHM Semiconductor |
MOSFET N/P-CH 30V 4A TSMT8 |
|
RJK03K3DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
NTJD4105CT2GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V/8V SOT-363 |