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QS8M12TCR

QS8M12TCR

Image is for reference, please contact us to get the real picture

Part No :

QS8M12TCR

Manufacturer
ROHM Semiconductor
Description
MOSFET N/P-CH 30V 4A TSMT8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
370837 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 13 - Apr 17 2025
PDF
QS8M12TCR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:4A
Rds On (Max) @ Id, Vgs:42mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:3.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:250pF @ 10V
Power - Max:1.5W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:TSMT8
QS8M12TCR is available at GangBo-ic.com, Please review product page below for detailed information, including QS8M12TCR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for QS8M12TCR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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