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SI8900EDB-T2-E1

SI8900EDB-T2-E1

MOSFET 2N-CH 20V 5.4A 10-MFP

168864

168864

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SI8900EDB-T2-E1

SI8900EDB-T2-E1

Image is for reference, please contact us to get the real picture

Part No :

SI8900EDB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 20V 5.4A 10-MFP
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
320832 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SI8900EDB-T2-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:5.4A
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:10-UFBGA, CSPBGA
Supplier Device Package:10-Micro Foot™ CSP (2x5)
SI8900EDB-T2-E1 is available at GangBo-ic.com, Please review product page below for detailed information, including SI8900EDB-T2-E1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI8900EDB-T2-E1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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