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SIA910EDJ-T1-GE3

SIA910EDJ-T1-GE3

MOSFET 2N-CH 12V 4.5A SC-70-6

PC911L0NSZ0F

PC911L0NSZ0F

OPTOISO 5KV PUSH PULL 8DIP

SIA910EDJ-T1-GE3

SIA910EDJ-T1-GE3

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Part No :

SIA910EDJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 12V 4.5A SC-70-6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
22614 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SIA910EDJ-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:4.5A
Rds On (Max) @ Id, Vgs:28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:455pF @ 6V
Power - Max:7.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SC-70-6 Dual
Supplier Device Package:PowerPAK® SC-70-6 Dual
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