P-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A |
Rds On (Max) @ Id, Vgs: | 100mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 542pF @ 10V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN2024UTS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSSOP-8 T&R |
|
FDC6401NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 3A SSOT-6 |
|
ALD310704SCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16SOIC |
|
DMNH6042SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 60V 16.7A 8SO |
|
IRFHE4250DTRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRF9389TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO |
|
ALD110908ASALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
SSM6N357R,LFToshiba Electronic Devices and Storage Corporation |
SMALL LOW R-ON MOSFETS DUAL NCH |
|
FDW2501NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIZ256DT-T1-GE3Vishay / Siliconix |
DUAL N-CHANNEL 70 V (D-S) MOSFET |
|
SI7942DP-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 100V 3.8A PPAK SO-8 |
|
VEC2616-TL-HRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
APTM50AM35FTGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 99A SP4 |