MOSFET 4 P-CH 8V 16SOIC
SMA-RP/TNC-SJB G316 60I
Type | Description |
---|---|
Series: | EPAD®, Zero Threshold™ |
Package: | Tube |
Part Status: | Active |
FET Type: | 4 P-Channel, Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 8V |
Current - Continuous Drain (Id) @ 25°C: | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | 380mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
DMNH6042SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 60V 16.7A 8SO |
![]() |
IRFHE4250DTRPBFRochester Electronics |
HEXFET POWER MOSFET |
![]() |
IRF9389TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO |
![]() |
ALD110908ASALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
![]() |
SSM6N357R,LFToshiba Electronic Devices and Storage Corporation |
SMALL LOW R-ON MOSFETS DUAL NCH |
![]() |
FDW2501NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
SIZ256DT-T1-GE3Vishay / Siliconix |
DUAL N-CHANNEL 70 V (D-S) MOSFET |
![]() |
SI7942DP-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 100V 3.8A PPAK SO-8 |
![]() |
VEC2616-TL-HRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
![]() |
APTM50AM35FTGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 99A SP4 |
![]() |
BSZ0909NDXTMA1IR (Infineon Technologies) |
MOSFET 2N-CH 30V 20A WISON-8 |
![]() |
EMH2402-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
![]() |
SLA5201Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 600V 7A 15-SIP |