HEXFET POWER MOSFET
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 86A (Tc), 303A (Tc) |
Rds On (Max) @ Id, Vgs: | 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 35µA, 2.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC, 53nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1735pF @ 13V, 4765pF @ 13V |
Power - Max: | 156W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 32-PowerVFQFN |
Supplier Device Package: | 32-PQFN (6x6) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF9389TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO |
|
ALD110908ASALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
SSM6N357R,LFToshiba Electronic Devices and Storage Corporation |
SMALL LOW R-ON MOSFETS DUAL NCH |
|
FDW2501NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIZ256DT-T1-GE3Vishay / Siliconix |
DUAL N-CHANNEL 70 V (D-S) MOSFET |
|
SI7942DP-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 100V 3.8A PPAK SO-8 |
|
VEC2616-TL-HRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
APTM50AM35FTGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 99A SP4 |
|
BSZ0909NDXTMA1IR (Infineon Technologies) |
MOSFET 2N-CH 30V 20A WISON-8 |
|
EMH2402-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
SLA5201Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 600V 7A 15-SIP |
|
DMN5010VAK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.28A SOT-563 |
|
SQ3585EV-T1_GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 6TSOP |